NOTE! This site uses cookies and similar technologies.

If you not change browser settings, you agree to it. Learn more

I understand
Thursday, 15 January 2015 17:24

Performance and Reliability Analysis of Cross-Layer Optimizations of NAND Flash Controllers

Rate this item
(0 votes)

Davide Bertozzi, Stefano Di Carlo, Salvatore Galfano, Marco Indaco, Piero Olivo, Paolo Prinetto, and Cristian Zambelli, in ACM Trans. Embed. Comput. Syst. 14, 1,  24 pages, Article 7, January 2015



NAND flash memories are becoming the predominant technology in the implementation of mass storage systems for both embedded and high-performance applications. However, when considering data and code storage in Non-Volatile Memories (NVMs), such as NAND flash memories, reliability and performance become a serious concern for systems designers. Designing NAND flash-based systems based on worst-case scenarios leads to waste of resources in terms of performance, power consumption, and storage capacity. This is clearly in contrast with the request for runtime reconfigurability, adaptivity, and resource optimization in modern computing systems. There is a clear trend toward supporting differentiated access modes in flash memory controllers, each one setting a differentiated tradeoff point in the performance-reliability optimization space. This is supported by the possibility of tuning the NAND flash memory performance, reliability, and power consumption through several tuning knobs such as the flash programming algorithm and the flash error correcting code. However, to successfully exploit these degrees of freedom, it is mandatory to clearly understand the effect that the combined tuning of these parameters has on the full NVM subsystem. This article performs a comprehensive quantitative analysis of the benefits provided by the runtime reconfigurability of an MLC NAND flash controller through the combined effect of an adaptable memory programming circuitry coupled with runtime adaptation of the ECC correction capability. The full NVM subsystem is taken into account, starting from a characterization of the low-level circuitry to the effect of the adaptation on a wide set of realistic benchmarks in order to provide readers a clear view of the benefit this combined adaptation may provide at the system level.


  •  BIBTEX:
 author = {Bertozzi, Davide and Carlo, Stefano Di and Galfano, Salvatore and Indaco, Marco and Olivo, Piero and Prinetto, Paolo and Zambelli, Cristian},
  title = {Performance and Reliability Analysis of Cross-Layer Optimizations of NAND Flash Controllers},
  journal = {ACM Trans. Embed. Comput. Syst.},
  issue_date = {January 2015},
  volume = {14},
  number = {1},
  month = jan,
  year = {2015},
  issn = {1539-9087},
 pages = {7:1--7:24},
  articleno = {7},
  numpages = {24},
  doi = {10.1145/2629562},
  acmid = {2629562},
  publisher = {ACM},
  address = {New York, NY, USA},
  • DOI: 10.1145/2629562
  • KEYWORDS: Adaptable memory controllers, ECC, NAND flash memories


Read 1597 times Last modified on Friday, 12 June 2015 15:21

Add comment

Security code